Scalability of voltage-controlled filamentary and nanometallic resistance memory devices
Author:
Affiliation:
1. Department of Materials Science and Engineering
2. University of Pennsylvania
3. Philadelphia
4. USA
Abstract
An area-proportional current compliance can ensure the area-scalability of RRAM's resistance, in both the high resistance state and the low resistance state, which stems from voltage-controlled switching.
Funder
Division of Materials Research
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2017/NR/C7NR02915B
Reference48 articles.
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