Funder
National Research Foundation of Korea
Korea Ministry of Science and ICT
Ministry of Science, ICT and Future Planning
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference35 articles.
1. Filamentary and interface switching of CMOS-compatible Ta2O5 memristor for non-volatile memory and synaptic devices;Ryu;Appl. Surf. Sci.,2020
2. Resistive random access memory (RRAM): an overview of materials, switching mechanism, performance, multilevel cell (mlc) storage, modeling, and applications;Zahoor;Nanoscale Res Lett.,2020
3. Resistance random access memory;Chang;Mater. Today,2016
4. In-memory computing with resistive switching devices;Ielmini;Nat. Electron,2018
5. Scalability of voltage-controlled filamentary and nanometallic resistance memory devices;Lu;Nanoscale,2017
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