Filamentary and interface switching of CMOS-compatible Ta2O5 memristor for non-volatile memory and synaptic devices-Reference-Cited by-同舟云学术

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Filamentary and interface switching of CMOS-compatible Ta2O5 memristor for non-volatile memory and synaptic devices

Published:2020-11 Issue: Volume:529 Page:147167
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Ryu Ji-Ho,Hussain Fayyaz,Mahata Chandreswar,Ismail Muhammad,Abbas Yawar,Kim Min-Hwi,Choi Changhwan,Park Byung-Gook,Kim Sungjun

Funder

National Research Foundation of Korea

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference51 articles.

1. Nanoscale memristor device as synapse in neuromorphic systems;Jo;Nano Lett.,2010

2. A synaptic electrochemical memristor based on the Cu2+/Zn2+cation exchange in Zn:CdS thin films;Congiu;ChemistrySelect.,2018

3. Analog synaptic behavior of a silicon nitride memristor;Kim;ACS Appl. Mater. Interfaces,2017

4. Demonstration of synaptic behaviors and resistive switching characterizations by proton exchange reactions in silicon oxide;Chang;Sci. Rep.,2016

5. Dual functionality of threshold and multi-level resistive switching characteristics in nanoscale HfO2-based RRAM devices for artificial neuron and synapse elements;Woo;Microelectron. Eng.,2017

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4. Sodium-Controlled Interfacial Resistive Switching in Thin Film Niobium Oxide for Neuromorphic Applications;Chemistry of Materials;2024-05-31

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