Nanoionic memristive phenomena in metal oxides: the valence change mechanism-Reference-Cited by-同舟云学术

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Nanoionic memristive phenomena in metal oxides: the valence change mechanism

Published:2021-04-03 Issue:2 Volume:70 Page:155-349
ISSN:0001-8732
Container-title:Advances in Physics
language:en
Short-container-title:Advances in Physics

Author:

Dittmann Regina¹²^ORCID,Menzel Stephan¹³^ORCID,Waser Rainer¹²⁴^ORCID

Affiliation:

1. Peter Grünberg Institute PGI-7, Electronic Materials, Forschungszentrum Jülich, Jülich, Germany

2. Jülich-Aachen Research Alliance, Section Future Information Technology (JARA-FIT), Aachen, Germany

3. IBM Research – Zurich, Rüschlikon, Switzerland

4. Institute für Werkstoffe der Elektrotechnik IWE-2, RWTH Aachen University, Aachen, Germany

Funder

DFG SFB Nanoswitches

BMBF

Gottfried Wilhelm Leibniz Prize 2014

Publisher

Informa UK Limited

Subject

Condensed Matter Physics

Link

https://www.tandfonline.com/doi/pdf/10.1080/00018732.2022.2084006

Reference643 articles.

1. Memristive devices and systems

2. Electrical phenomena in amorphous oxide films

3. Electroforming, Switching and Memory Effects in Oxide Thin Films

4. Bistable switching in electroformed metal–insulator–metal devices

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