Advanced temperature dependent statistical analysis of forming voltage distributions for three different HfO2-based RRAM technologies-Reference-Cited by-同舟云学术

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Advanced temperature dependent statistical analysis of forming voltage distributions for three different HfO2-based RRAM technologies

Published:2021-02 Issue: Volume:176 Page:107961
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Pérez Eduardo,Maldonado David,Acal Christian,Ruiz-Castro Juan Eloy,Aguilera Ana María,Jiménez-Molinos Francisco,Roldán Juan Bautista,Wenger Christian

Funder

Ministerio de Ciencia y Tecnología

Junta de Andalucía

Deutsche Forschungsgemeinschaft

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference48 articles.

1. Recent progress in resistive random access memories: materials, switching mechanisms and performance;Pan;Mater Sci Eng,2014

2. Utilizing the variability of resistive random access memory to implement reconfigurable physical unclonable functions;Chen;IEEE Electron Device Lett,2015

3. Resistive switching memories based on metal oxides: mechanisms, reliability and scaling;Ielmini;Semicond Sci Technol,2016

4. Oxide-based RRAM materials for neuromorphic computing;Hong;J Mater Sci,2018

5. Resistive switching mechanisms relating to oxygen vacancies migration in both interfaces in Ti/HfOx/Pt memory devices;Lin;J Appl Phys,2013

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1. Uniformity Improvement of Ti/ZrO₂/Pt RRAM by Analyzing and Reducing Current Overshoot;ACS Applied Electronic Materials;2024-06-12

2. Hardware implementation of memristor-based artificial neural networks;Nature Communications;2024-03-04

3. A shiny app for modeling the lifetime in primary breast cancer patients through phase-type distributions;Mathematical Biosciences and Engineering;2023

4. Review on role of nanoscale HfO2 switching material in resistive random access memory device;Emergent Materials;2022-02-28

5. One Cut-Point Phase-Type Distributions in Reliability. An Application to Resistive Random Access Memories;Mathematics;2021-10-28

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