Modulation of Resistive Switching Behaviour of TaO<sub>x</sub>-based Memristor Through Device Engineering-Reference-Cited by-同舟云学术

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Modulation of Resistive Switching Behaviour of TaO_x-based Memristor Through Device Engineering

Published:2022-04-07 Issue: Volume: Page:
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Container-title:2022 IEEE 7th International conference for Convergence in Technology (I2CT)
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Author:

Poojith Kummara¹,Varshney Kanupriya¹,Yadav Mani Shankar¹,Das Devarshi¹,Rawat Brajesh¹

Affiliation:

1. Indian Institute of Technology,Department of Electrical Engineering,Ropar,India,140001

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9823959/9823960/09824458.pdf?arnumber=9824458

Reference26 articles.

1. Self-selective van der Waals heterostructures for large scale memory array

2. Quantitative, Dynamic TaOx Memristor/Resistive Random Access Memory Model

3. Reliable Multivalued Conductance States in TaOx Memristors through Oxygen Plasma-Assisted Electrode Deposition with in Situ-Biased Conductance State Transmission Electron Microscopy Analysis

4. Physical electro-thermal model of resistive switching in bi-layered resistance-change memory

5. On-Chip TaOx-Based Non-volatile Resistive Memory for in vitro Neurointerfaces

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance of Graphene Oxide-based Memristor for Nonvolatile Memory and Neuromorphic Computing;2022 IEEE International Conference on Emerging Electronics (ICEE);2022-12-11

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