Quantitative, Dynamic TaOx Memristor/Resistive Random Access Memory Model-Reference-Cited by-同舟云学术

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Quantitative, Dynamic TaOx Memristor/Resistive Random Access Memory Model

Published:2020-02-25 Issue:3 Volume:2 Page:701-709
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Lee Seung Hwan¹^ORCID,Moon John¹,Jeong YeonJoo¹²,Lee Jihang¹,Li Xinyi³,Wu Huaqiang³^ORCID,Lu Wei D.¹^ORCID

Affiliation:

1. Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, United states

2. Center for Electronic Materials, Korea Institute of Science and Technology, Seoul 02792, South Korea

3. Institute of Microelectronics, Tsinghua University, Beijing 100084, P.R. China

Funder

Defense Advanced Research Projects Agency

Semiconductor Research Corporation

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.9b00792

Reference45 articles.

1. The future of electronics based on memristive systems

2. In-memory computing with resistive switching devices

3. Memristive crossbar arrays for brain-inspired computing

4. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

5. Sub-nanosecond switching of a tantalum oxide memristor

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