Effect of Trimethyl Aluminium Surface Pretreatment on Atomic Layer Deposition Al 2 O 3 Ultra-Thin Film on Si Substrate
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference13 articles.
1. Microstructural and Electrical Properties of ZrO 2 Thin Films Prepared on silicon on Insulator with Thin Top silicon
2. High-κ gate dielectrics: Current status and materials properties considerations
3. Chemical interaction between atomic-layer-deposited HfO2 thin films and the Si substrate
4. Ammonia pretreatment for high-κ dielectric growth on silicon
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3. Electronic structure and optical properties of Nb doped Al2O3 on Si by atomic layer deposition;Solid State Communications;2010-09
4. Electrical Characterization of Metal–Insulator–Metal Capacitors with Atomic-Layer-Deposited HfO 2 Dielectrics for Radio Frequency Integrated Circuit Application;Chinese Physics Letters;2007-09-28
5. Characterization of Al 2 O 3 Thin Films on GaAs Substrate Grown by Atomic Layer Deposition;Chinese Physics Letters;2006-06-28
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