Electronic structure and optical properties of Nb doped Al2O3 on Si by atomic layer deposition-Reference-Cited by-同舟云学术

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Electronic structure and optical properties of Nb doped Al2O3 on Si by atomic layer deposition

Published:2010-09 Issue:35-36 Volume:150 Page:1690-1692
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Xu Yan,Chen Lin,Sun Qing-Qing,Gu Jing-Jing,Lu Hong-Liang,Wang Peng-Fei,Ding Shi-Jin,Zhang David Wei

Funder

National Natural Science Foundation of China

State Key Laboratory of ASIC and System, Fudan University

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference17 articles.

1. High dielectric constant gate oxides for metal oxide Si transistors

2. Integrated high-/spl kappa/ (/spl kappa/ /spl sim/19) MIM capacitor with Cu/low-/spl kappa/ interconnects for RF application

3. Reverse-bias-induced bipolar resistance switching in Pt∕TiO2∕SrTi0.99Nb0.01O3∕Pt devices

4. Resistance switching in amorphous and crystalline binary oxides grown by electron beam evaporation and atomic layer deposition

5. Reproducible resistance switching characteristics of pulsed laserdeposited polycrystalline Nb2O5

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1. Coking and deactivation behavior study of Ce-modified Cs-Nb/Al2O3 in aldol condensation of methyl propionate with formaldehyde;Molecular Catalysis;2024-07

2. Acid Promoter-Modified Cs/Al₂O₃ Catalyst for Methyl Methacrylate Production by Aldol Condensation of Methyl Propionate with Formaldehyde;Industrial & Engineering Chemistry Research;2023-11-29

3. Enhanced photocatalytic properties of ZnO/Al2O3 nanorod heterostructure;Materials Research Express;2021-04-01

4. Silicon oxide-niobium oxide mixture films and nanolaminates grown by atomic layer deposition from niobium pentaethoxide and hexakis(ethylamino) disilane;Nanotechnology;2020-02-25

5. Optical properties and bandgap evolution of ALD HfSiOx films;Nanoscale Research Letters;2015-02-05

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