Optical properties and bandgap evolution of ALD HfSiOx films-Reference-Cited by-同舟云学术

Optical properties and bandgap evolution of ALD HfSiOx films

Published:2015-02-05 Issue:1 Volume:10 Page:
ISSN:1931-7573
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Yang Wen,Fronk Michael,Geng Yang,Chen Lin,Sun Qing-Qing,Gordan Ovidiu D,zhou Peng,Zahn Dietrich RT,Zhang David Wei

Abstract

Abstract Hafnium silicate films with pure HfO2 and SiO2 samples as references were fabricated by atomic layer deposition (ALD) in this work. The optical properties of the films as a function of the film composition were measured by vacuum ultraviolet (VUV) ellipsometer in the energy range of 0.6 to 8.5 eV, and they were investigated systematically based on the Gaussian dispersion model. Experimental results show that optical constants and bandgap of the hafnium silicate films can be tuned by the film composition, and a nonlinear change behavior of bandgap with SiO2 fraction was observed. This phenomenon mainly originates from the intermixture of d-state electrons in HfO2 and Si-O antibonding states in SiO2.

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/article/10.1186/s11671-014-0724-z/fulltext.html

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