Time dependent dielectric breakdown (TDDB) characteristics of metal–oxide–semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Time dependent dielectric breakdown (TDDB) characteristics of metal–oxide–semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics

Published:2012-11 Issue: Volume:77 Page:2-6
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Hsu H.W.,Huang H.S.,Chen H.W.,Cheng C.P.,Lin K.C.,Chen S.Y.,Wang M.C.,Liu C.H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. Interface characterization and current conduction in HfO2-gated MOS capacitors;Chen;Appl Surf Sci,2008

2. Highly reliable high-κ gate dielectrics with gradual Hf-profile in the HfO2/SiO2 interface region;Iwamoto;Solid State Electron,2006

3. Scaling CMOS: finding the gate stack with the lowest leakage current;Kauerauf;Solid State Electron,2005

4. Improved short channel device characteristics with stress relieved pre-oxide (SRPO) and a novel tantalum carbon alloy metal gate/HfO2 stack;Tseng;Tech Dig Int Electron Device Meeting,2004

5. Challenges for the integration of metal gate electrodes;Schaeffer;Tech Dig Int Electron Device Meeting,2004

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interface State Density Modification and Dielectric Reliability Enhancement of ErTi_xO_y/Al₂O₃/InP Laminated Stacks;IEEE Transactions on Electron Devices;2023-04

2. An overview of conventional and new advancements in high kappa thin film deposition techniques in metal oxide semiconductor devices;Journal of Materials Science: Materials in Electronics;2022-03-08

3. Optical properties and bandgap evolution of ALD HfSiOx films;Nanoscale Research Letters;2015-02-05

4. Kink effect for 28 nm n-channel field-effect transistors after decoupled plasma nitridation treatment with annealing temperatures;International Journal of Nanotechnology;2015

5. Time-dependent-dielectric-breakdown characteristics of Hf-doped Ta2O5/SiO2 stack;Microelectronics Reliability;2014-02

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3