Fast Homoepitaxial Growth of 4H-SiC Films on 4° off-Axis Substrates in a SiH 4 -C 2 H 4 -H 2 System-Reference-Cited by-同舟云学术

Fast Homoepitaxial Growth of 4H-SiC Films on 4° off-Axis Substrates in a SiH 4 -C 2 H 4 -H 2 System

Published:2013-12 Issue:12 Volume:30 Page:128101
ISSN:0256-307X
Container-title:Chinese Physics Letters
language:
Short-container-title:Chinese Phys. Lett.

Author:

Liu Bin,Sun Guo-Sheng,Liu Xing-Fang,Zhang Feng,Dong Lin,Zheng Liu,Yan Guo-Guo,Liu Sheng-Bei,Zhao Wan-Shun,Wang Lei,Zeng Yi-Ping,Li Xi-Guang,Wang Zhan-Guo,Yang Fei

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/0256-307X/30/12/128101/pdf

Reference25 articles.

1. The fabrication and characterization of 4H—SiC power UMOSFETs

2. SiC power Schottky and PiN diodes

3. Demonstration of the first 10-kV 4H-SiC Schottky barrier diodes

4. 4H SiC Epitaxial Growth with Chlorine Addition

5. Development of a Practical High-Rate CVD System

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