The influence of growth temperature on 4H-SiC epilayers grown on different off-angle (0 0 0 1) Si-face substrates-Reference-Cited by-同舟云学术

The influence of growth temperature on 4H-SiC epilayers grown on different off-angle (0 0 0 1) Si-face substrates

Author:

Yan G.G.,Liu X.F.,Shen Z.W.,Zhao W.S.,Wang L.,Cui Y.X.,Li J.T.,Zhang F.,Sun G.S.,Zeng Y.P.

Funder

Science Challenge Project

National Basic Research Program of China

National Natural Science Foundation of China

Beijing NOVA Program

Beijing Municipal Science and Technology Commission Project

Youth Innovation Promotion Association of CAS

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference21 articles.

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