Study of the deposition of nanopillar-patterned 4H-SiC by molecular dynamics simulation-Reference-Cited by-同舟云学术

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Study of the deposition of nanopillar-patterned 4H-SiC by molecular dynamics simulation

Published:2022-03 Issue: Volume:579 Page:152209
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Xue Lianghao,Feng Gan,Wu Gai,Wang Shizhao,Li Rui,Han Xu,Sun Yameng,Liu Sheng

Funder

Natural Science Foundation of Hubei Province

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference36 articles.

1. Wide band gap a-SiC : H films for optoelectronic applications;Giorgis;J. Non-Cryst. Solids,1998

2. Ultrahigh-quality silicon carbide single crystals;Nakamura;Nature,2004

3. Bulk growth of single crystal silicon carbide;Sudarshan;Microelectron. Eng.,2006

4. Evaluation of switching loss contributed by parasitic ringing for fast switching wide band-gap devices;Zhang;IEEE Trans. Power Electron.,2019

5. Demonstration and analysis of a 600 V, 10 A, 4H-SiC lateral single RESURF MOSFET for power ICs applications;Yun;Appl. Phys. Lett.,2019

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1. The effect of shear on nucleation and movement of basal plane dislocations in 4H-SiC;Journal of Applied Physics;2024-07-25

2. Effects of A s 8 structure formation on the surface morphology and internal microstructure of GaAs thin films;Journal of Physics: Condensed Matter;2024-05-28

3. Atomistic insights into chemical vapor deposition process of preparing silicon carbide materials using ReaxFF-MD simulation;Computational Materials Science;2024-05

4. The deposition properties of tetrahedral amorphous carbon coatings deposited on piston ring: Molecular dynamics simulation;Journal of Applied Physics;2024-02-13

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