Strain Distributions in Non-Polar a-Plane In x Ga 1− x N Epitaxial Layers on r-Plane Sapphire Extracted from X-Ray Diffraction-Reference-Cited by-同舟云学术

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Strain Distributions in Non-Polar a-Plane In x Ga 1− x N Epitaxial Layers on r-Plane Sapphire Extracted from X-Ray Diffraction

Published:2013-09 Issue:9 Volume:30 Page:098102
ISSN:0256-307X
Container-title:Chinese Physics Letters
language:
Short-container-title:Chinese Phys. Lett.

Author:

Zhao Gui-Juan,Yang Shao-Yan,Liu Gui-Peng,Liu Chang-Bo,Sang Ling,Gu Cheng-Yan,Liu Xiang-Lin,Wei Hong-Yuan,Zhu Qin-Sheng,Wang Zhan-Guo

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/0256-307X/30/9/098102/pdf

Reference17 articles.

1. Polarity determination of a-plane GaN on r-plane sapphire and its effects on lateral overgrowth and heteroepitaxy

2. Defect reduction in (112̄0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy

3. GaN growth on sapphire

4. Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire

5. Growth and characterization of a-plane AlxGa1−xN alloys by metalorganic chemical vapor deposition

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Anisotropically biaxial strain in non-polar (112–0) plane In x Ga1−x N/GaN layers investigated by X-ray reciprocal space mapping;Scientific Reports;2017-07-03

2. Strain analysis of free-standing strained silicon-on-insulator nanomembrane;Chinese Physics B;2015-02-26

3. Effects of V/III ratio on a -plane GaN epilayers with an InGaN interlayer;Chinese Physics B;2014-02

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