Effects of V/III ratio on a -plane GaN epilayers with an InGaN interlayer-Reference-Cited by-同舟云学术

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Effects of V/III ratio on a -plane GaN epilayers with an InGaN interlayer

Published:2014-02 Issue:2 Volume:23 Page:026801
ISSN:1674-1056
Container-title:Chinese Physics B
language:
Short-container-title:Chinese Phys. B

Author:

Wang Jian-Xia,Wang Lian-Shan,Yang Shao-Yan,Li Hui-Jie,Zhao Gui-Juan,Zhang Heng,Wei Hong-Yuan,Jiao Chun-Mei,Zhu Qin-Sheng,Wang Zhan-Guo

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/1674-1056/23/2/026801/pdf

Reference22 articles.

1. Spontaneous polarization and piezoelectric constants of III-V nitrides

2. Understanding nonpolar GaN growth through kinetic Wulff plots

3. Improvements in a-plane GaN crystal quality by a two-step growth process

4. Structural TEM study of nonpolara-plane gallium nitride grown on(112¯0)4H-SiC by organometallic vapor phase epitaxy

5. Luminescence from stacking faults in gallium nitride

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Anisotropically biaxial strain in non-polar (112–0) plane In x Ga1−x N/GaN layers investigated by X-ray reciprocal space mapping;Scientific Reports;2017-07-03

2. Aluminum incorporation efficiencies in A - and C -plane AlGaN grown by MOVPE;Chinese Physics B;2016-04

3. Morphological and Microstructural Evolution and Related Impurity Incorporation in Non-Polar a -Plane GaN Grown on r-Sapphire Substrates;Chinese Physics Letters;2015-09

4. Effect of the thickness of InGaN interlayer on a -plane GaN epilayer;Chinese Physics B;2015-02

5. Effect of interface nucleation time of the GaN nucleation layer on the crystal quality of GaN film;Acta Physica Sinica;2015

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