Growth and characterization of a-plane AlxGa1−xN alloys by metalorganic chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference27 articles.
1. Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet region
2. Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN
3. Ultraviolet AlGaN multiple-quantum-well laser diodes
4. Room-temperature deep-ultraviolet lasing at 241.5 nm of AlGaN multiple-quantum-well laser
5. Spontaneous polarization and piezoelectric constants of III-V nitrides
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1. Influences of nitridation treatment on the properties of semi-polar (11 2‾2) plane AlGaN films;Materials Science in Semiconductor Processing;2022-11
2. Enhancement of AlxGa1-xN nanowire array photocathode with heterojunction Al composition assisted by external electric field;Journal of Luminescence;2021-07
3. Positioning of periodic AlN/GaN multilayers: Effect on crystalline quality of a-plane GaN;Materials Science in Semiconductor Processing;2020-01
4. Effects of indium surfactant and MgN intermediate layers on surface morphology and crystalline quality of nonpolar a-plane AlGaN epi-layers;Optik;2019-09
5. Dependence of Al incorporation on growth temperature during laser molecular beam epitaxy of AlxGa1−xN epitaxial layers on sapphire (0001);Journal of Alloys and Compounds;2018-03
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