Oxygen Recovery in Hf Oxide Films Fabricated by Sputtering
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/26/5/057101/pdf
Reference12 articles.
1. The electronic structure at the atomic scale of ultrathin gate oxides
2. Experimental observations of the thermal stability of high-k gate dielectric materials on silicon
3. Effect of thickness on the crystallization of ultrathin HfSiON gate dielectrics
4. Incipient amorphous-to-crystalline transition in HfO2 as a function of thickness scaling and anneal temperature
5. Two-step behavior of initial oxidation at HfO2∕Si interface
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1. Comparision of in situ spectroscopic ellipsometer and ex situ x-ray photoelectron spectroscopy depth profiling analysis of HfO2/Hf/Si multilayer structure;Materials Research Express;2018-08-15
2. Electrical characteristics and interface properties of ALD-HfO2/AlGaN/GaN MIS-HEMTs fabricated with post-deposition annealing;Semiconductor Science and Technology;2017-11-20
3. Effect of thermal annealing and oxygen partial pressure on the swelling of HfO2/SiO2/Si metal-oxide-semiconductor structure grown by rf sputtering: A synchrotron x-ray reflectivity study;Applied Physics Letters;2014-09-15
4. Formation of W/HfO2/Si gate structures using in situ magnetron sputtering and rapid thermal annealing;Technical Physics;2014-05
5. Annealing effect on the formation of high-k dielectric in the W/ultrathin HfO2/Si-substrate system;Technical Physics Letters;2012-11
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