Two-step behavior of initial oxidation at HfO2∕Si interface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2337878
Reference16 articles.
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3. Interface engineering of a ZrO2/SiO2/Si layered structure by in situ reoxidation and its oxygen-pressure-dependent thermal stability
4. Stability of ZrO2 layers on Si (001) during high-temperature anneals under reduced oxygen partial pressures
5. Oxygen reaction-diffusion in metalorganic chemical vapor deposition HfO2 films annealed in O2
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