Oxygen reaction-diffusion in metalorganic chemical vapor deposition HfO2 films annealed in O2
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1502006
Reference19 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Interfacial reaction between chemically vapor-deposited HfO2 thin films and a HF-cleaned Si substrate during film growth and postannealing
3. Chemical vapor deposition of HfO2 films on Si(100)
4. High mobility HfO2 n- and p-channel transistors
5. Effect of Annealing Conditions on a Hafnium Oxide Reinforced SiO[sub 2] Gate Dielectric Deposited by Plasma-Enhanced Metallorganic CVD
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