Effect of thermal annealing and oxygen partial pressure on the swelling of HfO2/SiO2/Si metal-oxide-semiconductor structure grown by rf sputtering: A synchrotron x-ray reflectivity study
Author:
Affiliation:
1. Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064, India
2. ISU Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013, India
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Reference25 articles.
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3. Hafnium and zirconium silicates for advanced gate dielectrics
4. Electrical and spectroscopic comparison of HfO2/Si interfaces on nitrided and un-nitrided Si(100)
5. Atomic scale measurements of the interfacial electronic structure and chemistry of zirconium silicate gate dielectrics
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