Incipient amorphous-to-crystalline transition in HfO2 as a function of thickness scaling and anneal temperature-Reference-Cited by-同舟云学术

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Incipient amorphous-to-crystalline transition in HfO2 as a function of thickness scaling and anneal temperature

Published:2008-01 Issue:2-9 Volume:354 Page:399-403
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Lysaght Patrick S.,Woicik Joseph C.,Sahiner M. Alper,Lee Byoung-Hun,Jammy Raj

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. International Technology Roadmap for Semiconductors, 2005 Ed., 2005.

2. Ultrascaled hafnium silicon oxynitride gate dielectrics with excellent carrier mobility and reliability

3. Preparation and dielectric characterization of ferroelectric (PbxSr1−x)TiO3 glass ceramics doped with La2O3

4. Thermal stability of amorphous LaScO3 films on silicon

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