Effects of AlGaN/AlN Stacked Interlayers on GaN Growth on Si (111)
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/27/3/038103/pdf
Reference16 articles.
1. Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness
2. Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers andin situSixNy masking
3. Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy
4. Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors
5. Growth of crack-free GaN on Si(111) with graded AlGaN buffer layers
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1. Demonstration of 651 nm InGaN-based red light-emitting diode with an external quantum efficiency over 6% by InGaN/AlN strain release interlayer;Optics Express;2024-03-12
2. III-nitride semiconductor lasers grown on Si;Progress in Quantum Electronics;2021-05
3. Investigation on the bonding quality of GaN and Si wafers bonded with Mo/Au nano-layer in atmospheric air;Materials Science in Semiconductor Processing;2020-08
4. Electric field modulation technique for high-voltage AlGaN/GaN Schottky barrier diodes;Chinese Physics B;2013-10
5. Improved surface morphology and mobility of AlGaN/GaN HEMT grown on silicon substrate;physica status solidi (c);2011-11-29
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