Electric field modulation technique for high-voltage AlGaN/GaN Schottky barrier diodes
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/22/10/106107/pdf
Reference16 articles.
1. A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs
2. Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers
3. Effects of AlGaN/AlN Stacked Interlayers on GaN Growth on Si (111)
4. An AlGaN/GaN HEMT with a reduced surface electric field and an improved breakdown voltage
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1. Simulation Optimization of AlGaN/GaN SBD with Field Plate Structures and Recessed Anode;Micromachines;2023-05-26
2. The Influence of Anode Trench Geometries on Electrical Properties of AlGaN/GaN Schottky Barrier Diodes;Electronics;2020-02-07
3. A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer;Micromachines;2019-01-26
4. Evaluation by Simulation of AlGaN/GaN Schottky Barrier Diode (SBD) With Anode-Via Vertical Field Plate Structure;IEEE Transactions on Electron Devices;2018-06
5. Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode;Chinese Physics B;2015-09
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