InGaN-Based Blue Light Emitting Diodes with AlInN-GaN-AlInN Electron Blocking Layers
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/30/5/058503/pdf
Reference14 articles.
1. Efficiency enhancement of InGaN based blue light emitting diodes with InGaN/GaN multilayer barriers
2. Defect related issues in the “current roll-off” in InGaN based light emitting diodes
3. The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer
4. Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes
5. Origin of efficiency droop in GaN-based light-emitting diodes
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1. Effect of AlGaN interlayer on luminous efficiency and reliability of GaN-based green LEDs on silicon substrate*;Chinese Physics B;2020-04-01
2. Mitigation of Efficiency Droop in an Asymmetric GaN-Based High-Power Laser Diode With Sandwiched GaN/InAlN/GaN Lower Quantum Barrier;IEEE Photonics Journal;2018-12
3. The Efficiency Droop of InGaN-Based Green LEDs with Different Superlattice Growth Temperatures on Si Substrates via Temperature-Dependent Electroluminescence;Chinese Physics Letters;2017-07
4. Non- and semipolar AlInN one-dimensionally lattice-matched to GaN for realization of relaxed buffer layers for strain engineering in optically active GaN-based devices;physica status solidi (b);2015-09-28
5. Intentional anisotropic strain relaxation in ( 112¯2) oriented Al1−xInxN one-dimensionally lattice matched to GaN;Applied Physics Letters;2014-09-22
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