The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer-Reference-Cited by-同舟云学术

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The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer

Published:2011-09 Issue:9 Volume:20 Page:098503
ISSN:1674-1056
Container-title:Chinese Physics B
language:
Short-container-title:Chinese Phys. B

Author:

Lu Tai-Ping,Li Shu-Ti,Zhang Kang,Liu Chao,Xiao Guo-Wei,Zhou Yu-Gang,Zheng Shu-Wen,Yin Yi-An,Wu Le-Juan,Wang Hai-Long,Yang Xiao-Dong

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Reference16 articles.

1. Origin of efficiency droop in GaN-based light-emitting diodes

2. Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

3. Auger recombination in InGaN measured by photoluminescence

4. Internal quantum efficiency drop induced by the heat generation inside of light emitting diodes (LEDs)

5. Performance of High-Power AlInGaN Light Emitting Diodes

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1. Numerical Investigation on the Performance Enhancement of InGaN/GaN Light‐Emitting Diodes with a Novel p‐i‐n Electron‐Blocking Layer;International Journal of Optics;2024-01

2. Improving the Performance of AlGaN-Based Deep Ultraviolet Laser Diodes Using a Convex Waveguide Layer;Journal of Russian Laser Research;2022-09

3. Composition-graded quantum barriers improve performance in AlGaN-based deep ultraviolet laser diodes;Optical Engineering;2022-07-01

4. Defect incorporation in In-containing layers and quantum wells: experimental analysis via deep level profiling and optical spectroscopy;Journal of Physics D: Applied Physics;2020-10-20

5. Analysis of various electron blocking layers to improve efficiency in green light-emitting diodes;Ceramics International;2020-08

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