Effects of Hydrogen Treatment in Barrier on the Electroluminescence of Green InGaN/GaN Single-Quantum-Well Light-Emitting Diodes with V-Shaped Pits Grown on Si Substrates-Reference-Cited by-同舟云学术

Effects of Hydrogen Treatment in Barrier on the Electroluminescence of Green InGaN/GaN Single-Quantum-Well Light-Emitting Diodes with V-Shaped Pits Grown on Si Substrates

Published:2018-09 Issue:9 Volume:35 Page:098501
ISSN:0256-307X
Container-title:Chinese Physics Letters
language:
Short-container-title:Chinese Phys. Lett.

Author:

Wu Qing-feng,Cao Sheng,Mo Chun-lan,Zhang Jian-li,Wang Xiao-lan,Quan Zhi-jue,Zheng Chang-da,Wu Xiao-ming,Pan Shuan,Wang Guang-xu,Ding Jie,Xu Long-quan,Liu Jun-lin,Jiang Feng-yi

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/0256-307X/35/9/098501/pdf

Reference32 articles.

1. Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition

2. Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N2/H2-Grown GaN Barrier

3. Effect of hydrogen during growth of quantum barriers on the properties of InGaN quantum wells

4. The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimization on GaN LED efficiency

5. Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes

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