Abstract
Abstract
The influence of excessive H2 flow during barrier growth on optical and electrical properties of InGaN light-emitting diodes (LEDs) are investigated in this study. The room temperature photoluminescence of LEDs decays with excessive H2 treatment. Temperature-dependent photoluminescence (TDPL) reveals an increase of the density and a decrease of the activation energy of deep non-radiative recombination centers in the H2 treated LEDs. The external quantum efficiency (EQE) of the LEDs suffers from excessive H2 treatment. The leakage current on the reverse and forward sides of the LEDs are reduced significantly when treated with H2, which may be due to the suppressed Poole–Frenkel effect.
Funder
Innovative clean-energy research and application program of Beijing Municipal Science and Technology Commission
National Natural Science Foundation of China
Strategic Priority Research Program of Chinese Academy of Sciences
National Key Technology R&D Program of China
Subject
Metals and Alloys,Polymers and Plastics,Surfaces, Coatings and Films,Biomaterials,Electronic, Optical and Magnetic Materials
Cited by
4 articles.
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