Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N2/H2-Grown GaN Barrier-Reference-Cited by-同舟云学术

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Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N2/H2-Grown GaN Barrier

Published:2017-05-16 Issue:1 Volume:12 Page:
ISSN:1931-7573
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Zhou Xiaorun,Lu Taiping^ORCID,Zhu Yadan,Zhao Guangzhou,Dong Hailiang,Jia Zhigang,Yang Yongzhen,Chen Yongkang,Xu Bingshe

Funder

National Natural Science Foundation of China

Applied Basic Research Projects of Shanxi Province

National Key R&D Program of China

Shanxi Provincial Key Innovative Research Team in Science and Technology

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/s11671-017-2115-8.pdf

Reference51 articles.

1. Zhang Z-H, Liu W, Ju Z, Tiam Tan S, Ji Y, Kyaw Z et al (2014) Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers. Appl Phys Lett 104(24):243501

2. Liu G, Zhao H, Zhang J, Park JH, Mawst LJ, Tansu N (2011) Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography. Nanoscale Res Lett 6(1):342

3. Zhang J, Tansu N (2013) Optical gain and laser characteristics of InGaN quantum wells on ternary InGaN substrates. IEEE Photon J 5(2):2600111

4. Cao W, Biser JM, Ee YK, Li X-H, Tansu N, Chan HM et al (2011) Dislocation structure of GaN films grown on planar and nano-patterned sapphire. J Appl Phys 110(5):053505

5. Lu T, Li S, Liu C, Zhang K, Xu Y, Tong J et al (2012) Advantages of GaN based light-emitting diodes with a p-InGaN hole reservoir layer. Appl Phys Lett 100(14):141106

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