A process to fabricate micro‐membrane of Si3N4 and SiO2 using front‐side lateral etching technology
Author:
Alvi P.A.,Lourembam B.D.,Deshwal V.P.,Joshi B.C.,Akhtar J.
Abstract
PurposeTo fabricate submicrometer thin membrane of silicon nitride and silicon dioxide over an anisotropically etched cavity in (100) silicon.Design/methodology/approachPECVD of silicon dioxide and Silcion nitride layers of compatible thicknesses followed by thermal annealing in nitrogen ambients at 1,000°C for 30 min, leads to stable membrane formation. Anisotropic etching of (100) silicon below the membrane through channels on the sides has been used with controlled cavity dimensions.FindingsLateral front side etching through channels slows down etching rate drastically. The etching mechanism has been discussed with experimental details.Practical limitations/implicationsVacuum sealed cavity membranes can be realised for micro sensor applications.Originality/valueThe process is new and feasible for micro sensor technologies.
Subject
Electrical and Electronic Engineering,Industrial and Manufacturing Engineering
Reference9 articles.
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