Performance and package effect of a novel piezoresistive pressure sensor fabricated by front-side etching technology-Reference-Cited by-同舟云学术

Performance and package effect of a novel piezoresistive pressure sensor fabricated by front-side etching technology

Published:2005-03 Issue:1 Volume:119 Page:28-37
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Peng Chih-Tang,Lin Ji-Cheng,Lin Chun-Te,Chiang Kuo-Ning

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Semiconducting stress transducers utilizing the transverse and shear piezoresistance effects;Pfann;J. Appl. Phys.,1961

2. Graphical representation of the piezoresistance coefficient in silicon;Kanda;IEEE Trans. Electron Devices,1982

3. Measurement of package-induced stress and thermal zero shift in transfer molded silicon piezoresistive pressure sensor;Nyseather;J. Micromech. Microeng.,1998

4. The empirical verification of the FEM model of semiconductor pressure sensor;Pancewicz;Sens. Actuat. A,1999

5. Simulation of thermally induced package effects with regard to piezoresistive pressure sensors;Schilling;Sens. Actuat. A,1997

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