Author:
Aasmundtveit Knut E.,Eggen Trym,Manh Tung,Nguyen Hoang-Vu
Abstract
Purpose
This paper aims to demonstrate low-temperature bonding for piezoelectric materials at temperatures well below the relevant Curie temperatures so as to avoid depolarization of the piezoelectric material during bonding.
Design/methodology/approach
Au-coated test samples of lead zirconate titanate (PZT) are bonded to a WC-based resonant backing layer with In–Bi eutectic material in which the In–Bi metal system is a preform or thin, evaporated layers. The bonded samples are characterized using electrical impedance spectroscopy and cross-section microscopy. The first technique verifies the integrity of polarization and reveals the quality of the bondline in a non-destructive manner, particularly looking for voids and delaminations. The latter technique is destructive but gives more precise information and an overview of the structure.
Findings
Successful low-temperature (115°C) bonding with intact PZT polarization was demonstrated. The bondlines show a layered structure of Au/Au–In intermetallic compounds (with Bi inclusions)/Au, capable of withstanding temperatures as high as 271°C before remelting occurs. For bonded samples using In–Bi preform, repeatable bonds of high quality (very little voiding) were obtained, but the bonding time is long (1 h or more). For bonded samples using evaporated thin films of In–Bi, bonding can be performed in 30 min, but the process needs further optimization to be repeatable.
Originality/value
Low-temperature solid-liquid interdiffusion (SLID) bonding is a novel technique, merging the fields of low-temperature solder bonding with the SLID/transient liquid phase (TLP) approach, which is normally used for much higher temperatures.
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science,Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference15 articles.
1. High-temperature shear strength of solid-liquid interdiffusion (SLID) bonding: Cu-Sn, Au-Sn and Au-In,2014
2. In-Bi low-temperature SLID bonding,2016
3. Semiconductor joining by solid-liquid-interdiffusion (SLID) process;Journal of the Electrochemical Society,1966
4. Suppression of interdiffusion in Copper/Tin thin films;Journal of Materials Engineering and Performance,2012
5. Wafer-level solid-liquid interdiffusion bonding,2011
Cited by
7 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献