Transmission Electron Microscopy on Memristive Devices: An Overview
Author:
Affiliation:
1. Kiel University, Faculty of Engineering, Institute for Materials Science, Kiel 24143, Germany
2. Karlsruhe Institute of Technology, Institute of Nanotechnology, Hermann-von-Helmholtz-Platz 1, Eggenstein-Leopoldshafen 76344, Germany
Funder
Deutsche Forschungsgemeinschaft(DFG)
Publisher
Korean Society of Electron Microscopy
Link
http://pdf.medrang.co.kr/KJM/2016/046/KJM046-04-08.pdf
Reference67 articles.
1. Bulk mixed ion electron conduction in amorphous gallium oxide causes memristive behaviour
2. Switching of Cu/MoO x /TiN CBRAM at MoO x /TiN interface
3. Neuromorphic Atomic Switch Networks
4. Chemical and structural properties of conducting nanofilaments in TiN/HfO2-based resistive switching structures
5. Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications
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