Chemical and structural properties of conducting nanofilaments in TiN/HfO2-based resistive switching structures-Reference-Cited by-同舟云学术

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Chemical and structural properties of conducting nanofilaments in TiN/HfO2-based resistive switching structures

Published:2013-02-05 Issue:8 Volume:24 Page:085706
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Calka P,Martinez E,Delaye V,Lafond D,Audoit G,Mariolle D,Chevalier N,Grampeix H,Cagli C,Jousseaume V,Guedj C

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/24/i=8/a=085706/pdf

Reference44 articles.

1. Resistive switching in transition metal oxides

2. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

3. Effect of Scaling $\hbox{WO}_{x}$-Based RRAMs on Their Resistive Switching Characteristics

4. Unipolar $\hbox{TaO}_{x}$-Based Resistive Change Memory Realized With Electrode Engineering

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2. Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide;Nano Convergence;2023-12-01

3. Dual‐Mode Operation of Epitaxial Hf_0.5Zr_0.5O₂: Ferroelectric and Filamentary‐Type Resistive Switching;physica status solidi (a);2023-11-22

4. Ferroelectric Electroresistance after a Breakdown in Epitaxial Hf_0.5Zr_0.5O₂Tunnel Junctions;ACS Applied Electronic Materials;2023-01-30

5. Chemical potential gradient induced formation of Kirkendall voids at the epitaxial TiN/MgO interface;Nanoscale;2023

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