Channeling measurements of damage in ion bombarded semiconductors at 50° K
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00337577608233514
Reference23 articles.
1. Experimental Evidence for the Increase of Heavy Ion Ranges by Channeling in Crystalline Structure
2. Super ranges of fast ions in copper single crystals
3. Mitchell, J. B., Davies, J. A., Howe, L. M., Walker, R. S. and Winterbon, K. B. 1975.Ion Implantation in Semiconductors, Edited by: Namba, S. 493Plenum Press.
4. Low energy ion induced damage in silicon at 50 K
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