Beam-induced annealing of defects in silicon after light-ion implantation at 30 K-Reference-Cited by-同舟云学术

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Beam-induced annealing of defects in silicon after light-ion implantation at 30 K

Published:1987-02-15 Issue:6 Volume:35 Page:2732-2739
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Bech Nielsen B.,Andersen J. U.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.35.2732/fulltext

Reference24 articles.

1. Defects in silicon: Concepts and correlations

2. Ion-induced defects in semiconductors

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Neutron-enhanced annealing of ion-implantation induced damage in silicon heated by nuclear reactions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2014-09

2. Evolution of implantation induced damage under further ion irradiation: Influence of damage type;Journal of Applied Physics;2009-04

3. Monovacancy and Interstitial Migration in Ion-Implanted Silicon;Physical Review Letters;2007-06-29

4. Effect of energetic ions on the stability of bond-center hydrogen in silicon;Physical Review B;2007-06-14

5. Effects of implantation energy and annealing temperature on the structural evolution of Ge+-implanted amorphous Si;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2005-08

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