Evolution of implantation induced damage under further ion irradiation: Influence of damage type
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3086313
Reference78 articles.
1. Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering
2. Comparison of results and models of solid-phase epitaxial growth of implanted Si layers induced by electron- and ion-beam irradiation
3. Anomalous reduction of stage-I recovery in nickel irradiated with heavy ions in the energy range100–120MeV
4. Electron beam stimulated nonthermal crystallization of CdS surface layers: Observations by real‐time atomic‐resolution electron microscopy
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