The Use of Molecular Ions for Implantation Studies in Si and Ge-Reference-Cited by-同舟云学术

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The Use of Molecular Ions for Implantation Studies in Si and Ge

Published:1975 Issue: Volume: Page:493-500
ISSN:
Container-title:Ion Implantation in Semiconductors
language:
Short-container-title:

Author:

Mitchell J. B.,Davies J. A.,Howe L. M.,Walker R. S.,Winterbon K. B.,Foti G.,Moore J. A.

Publisher

Springer US

Link

http://link.springer.com/content/pdf/10.1007/978-1-4684-2151-4_62.pdf

Reference7 articles.

1. J. A. Moore, G. Carter and A. W. Tinsley, Radiation Effects, in press.

2. F. H. Eisen in “Channeling”, Ed. by D. V. Morgan, John Wiley and Sons, London, Chapter 14, (1973).

3. J. F. Ziegler and W. K. Chu, Thin Solid Films 19, 281 (1973).

4. K.B. Winterbon, Rad. Effects 13, 15(1972).

5. P. Sigmund, Appl. Phys. Lett. 25, 169(1974)

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Damage creation in silicon single crystals irradiated with 200 keV/atom clusters;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-04

2. Molecular ion implantation into silicon;Radiation Effects and Defects in Solids;1990-05

3. Superadditivity in the Implantation of Molecular Ions;MRS Proceedings;1988

4. The Creation and Annealing of Heavy Ion Damage in Silicon;MRS Proceedings;1987

5. High density cascade effects;Radiation Effects;1981-01

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