Tellurium implants into GaP at elevated temperatures–Atom site location and damage-Reference-Cited by-同舟云学术

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Tellurium implants into GaP at elevated temperatures–Atom site location and damage

Published:1973-01 Issue:1-2 Volume:17 Page:19-24
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Campbell A. B.,Grant W. A.,Stephens G. A.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337577308232592

Reference10 articles.

1. Whitton, J. L. and Carter, G. Proceedings of Int. Conf on Atomic Collision Phenomena in Solids. Edited by: Palmer, D. W., Thompson, M. W. and Townsend, P. D. pp.615North Holland Publishing Co.

2. ion implantation of bismuth into GaP. I. photoluminescence

3. Implantation and Annealing Behavior of Group III and V Dopants in Silicon as Studied by the Channeling Technique

4. ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERING

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ion implantation in III–V compounds;Radiation Effects;1980-01

2. Electrical profiles of magnesium‐ion‐implanted GaP;Journal of Applied Physics;1979-03

3. The application of high-resolution Rutherford backscattering techniques to near-surface analysis;Nuclear Instruments and Methods;1978-02

4. Investigation of ion‐implanted GaP layers by ellipsometry;Journal of Applied Physics;1977-12

5. Nitrogen implantation into GaP: Damage and nitrogen location studies;Journal of Electronic Materials;1975-04

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