ion implantation of bismuth into GaP. I. photoluminescence-Reference-Cited by-同舟云学术

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ion implantation of bismuth into GaP. I. photoluminescence

Published:1970-01 Issue:2 Volume:6 Page:285-291
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Merz J. L.,Feldman L. C.,Sadowski E. A.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337577008236308

Reference28 articles.

1. PHOTOLUMINESCENCE OF OXYGEN IN ZnTe INTRODUCED BY ION IMPLANTATION

2. Extended Abstracts of the Electronics Division, Electrochem. Soc., Fall Meeting: Detroit Mich. Oct.1969. pp.443N. Y.: Electrochem. Soc. also

3. Merz, J. L. to be published

4. Merz, J. L. Proc. 10th International Conference on the Physics of Semiconductors. Aug., Cambridge, Mass. (to be published)

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of Bi on embedded nanocrystal formation and thermoelectric properties of GaAs;Journal of Applied Physics;2015-02-10

2. Nitrogen implantation in GaAs1−xPx (x=0.4; 0.65);Applied Physics;1980-03

3. Nitrogen implantation in GaAs1−xPx. I. Photoluminescence properties;Journal of Applied Physics;1977-06

4. Stimulated emission on Nx(’’A‐line’’) recombination transitions in nitrogen‐implanted GaAs1−xPx(x≈0.37);Applied Physics Letters;1976-06-15

5. Nitrogen centers in GaP produced by hot implantation;Journal of Physics and Chemistry of Solids;1976-01

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