Surface contributions to the two-layer structure in the plasma deposition of a-Si : H-Reference-Cited by-同舟云学术

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Surface contributions to the two-layer structure in the plasma deposition of a-Si : H

Published:1984-04 Issue:4 Volume:49 Page:L47-L52
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Sacher E.¹²,Klemberg-Sapiehat J.¹²,Wertheimer M. R.¹²,Schreiber H. P.¹³,Groleau R.⁴

Affiliation:

1. a Ecole Polytechnique , C.P. 6079 succursale ‘A’, Montréal, Québec , H3C 3A7 , Canada

2. c Département de Génie Physique

3. d Département de Génie Chimique

4. b Département de Physique , Université de Montréal , C.P. 6128, succursale ‘A’, Montréal , Québec , H3C 3J7 , Canada

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642818408246519

Reference33 articles.

1. Thickness dependent conductivity of n-type hydrogenated amorphous silicon

2. Thickness and temperature dependence of the conductivity of phosphorus-doped hydrogenated amorphous silicon

3. On the vibrational electron energy loss spectra of benzene chemisorbed on the (111) and (100) nickel faces

4. The Large Volume Microwave Plasma Generator (LMP™): A New Tool for Research and Industrial Processing*

5. Thickness-dependent conductivity and photoconductivity of hydrogenated amorphous silicon

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Liquid Explosive Evaporative Removal of Submicron Particles from Hydrophilic Oxidized Silicon Surfaces;The Journal of Adhesion;1997-02

2. The Structure of the Irreversibly Bound Adhesion Promoter-Substrate Interfacial Layer of γ-Aminopropylsilanetriol on Crystalline Si, as Measured by XPS and FTIR;The Journal of Adhesion;1993-05

3. Ultraviolet photoelectron spectroscopic study of the surface etching of air-oxidized hydrogenated amorphous silicon by aqueous hydrofluoric acid solution;Applied Surface Science;1992-01

4. Band bending and Fermi level shifts in phosphorus-doped hydrogenated amorphous silicon studied by X-ray photoelectron spectroscopy;Surface Science;1991-11

5. Silicon-carbon reaction provoked by the sputter cleaning of lightly contaminated crystalline silicon;Applied Surface Science;1991-10

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