Ultraviolet photoelectron spectroscopic study of the surface etching of air-oxidized hydrogenated amorphous silicon by aqueous hydrofluoric acid solution
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference35 articles.
1. Surface contributions to the two-layer structure in the plasma deposition of a-Si : H
2. Predictions of SiHn stretching vibrations on atmospheric contamination of hydrogenated amorphous silicon
3. Evolution of the vibrational spectra of hydrogenated-amorphous-silicon thin films having columnar morphology
4. The surface characterization of the atmospheric contamination of hydrogenated amorphous silicon
5. Kinetics of the room-temperature air oxidation of hydrogenated amorphous silicon and crystalline silicon
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2. Meyer-Neldel Rule in Deep-Level-Transient-Spectroscopy and its Ramifications;MRS Proceedings;2003
3. Long-range structural relaxation in the Staebler-Wronski effect;Journal of Non-Crystalline Solids;1995-10
4. In-situ Auger electron spectroscopy of silicon thin films fabricated using ArF excimer laser-induced chemical vapor deposition and the oxidation process;Applied Surface Science;1994-05
5. PECVD silicon oxides as studied by XPS, RBS, ERDA, IRS and ESR;Applied Surface Science;1993-03
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