Band bending and Fermi level shifts in phosphorus-doped hydrogenated amorphous silicon studied by X-ray photoelectron spectroscopy-Reference-Cited by-同舟云学术

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Band bending and Fermi level shifts in phosphorus-doped hydrogenated amorphous silicon studied by X-ray photoelectron spectroscopy

Published:1991-11 Issue:1-3 Volume:258 Page:190-196
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Bekkay T.,Piyakis K.,Diawara Y.,Sacher E.,Yelon A.,Currie J.F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference54 articles.

1. Chemical and electronic structure of the SiO2/Si interface

2. The oxidation of silicon by dry oxygen can we distinguish between models?

3. Models for the oxidation of silicon

4. Investigations of the SiO2/Si interface. I. Oxidation of a clean Si(100) surface using photoemission spectroscopy with synchrotron radiation

5. Oxidation of silicon: Is there a slow interface reaction?

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Transformation of the Active Moiety in Phosphorus-Doped Fe–N–C for Highly Efficient Oxygen Reduction Reaction;ACS Catalysis;2023-07-03

2. Stereometric Analysis of Effects of Heat Stressing on Micromorphology of Si Single Crystals;Silicon;2019-01-26

3. Contact Doping of Silicon Wafers and Nanostructures with Phosphine Oxide Monolayers;ACS Nano;2012-10-29

4. Derivation of the near-surface dielectric function of amorphous silicon from photoelectron loss spectra;Journal of Non-Crystalline Solids;2012-09

5. Reply to “comment of M.P. Seah and P.J. Cumpson on ‘spectral noise removal by digital filtering and its application to surface analysis’ by K. Piyakis and E. Sacher”;Applied Surface Science;1993-04

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