Reduction of activation temperature at 150°C for IGZO films with improved electrical performance via UV-thermal treatment-Reference-Cited by-同舟云学术

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Reduction of activation temperature at 150°C for IGZO films with improved electrical performance via UV-thermal treatment

Published:2016-04-02 Issue:2 Volume:17 Page:73-78
ISSN:1598-0316
Container-title:Journal of Information Display
language:en
Short-container-title:Journal of Information Display

Author:

Tak Young Jun,Park Sung Pyo,Jung Tae Soo,Lee Heesoo,Kim Won-Gi,Park Jeong Woo,Kim Hyun Jae

Funder

National Research Foundation of Korea

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering,General Materials Science

Link

http://www.tandfonline.com/doi/pdf/10.1080/15980316.2016.1172524

Reference14 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Recent advances in low-temperature solution-processed oxide backplanes

3. Low-temperature formation of source–drain contacts in self-aligned amorphous oxide thin-film transistors

4. Review of solution-processed oxide thin-film transistors

5. Effects of Microwave Annealing on Nitrogenated Amorphous In-Ga-Zn-O Thin-Film Transistor for Low Thermal Budget Process Application

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1. Recent Advances in Gate Dielectrics for Enhanced Leakage Current Management and Device Performance;Transactions on Electrical and Electronic Materials;2024-05-09

2. Performance and Stability Enhancement of Fully Solution-Processed a-InZnO Thin-Film Transistors via Argon Plasma Treatment;ACS Applied Electronic Materials;2023-11-08

3. Performance and reliability improvement of all-solution processed indium zinc oxide thin-film transistor by UV irradiation treatment;Journal of Physics D: Applied Physics;2023-07-12

4. Improvement in Switching Characteristics and Bias Stability of Solution-Processed Zinc–Tin Oxide Thin Film Transistors via Simple Low-Pressure Thermal Annealing Treatment;Nanomaterials;2023-05-24

5. Optimizing Photonic Annealing Technique for High-k Dielectric of Full-Solution-Processed Oxide Thin Film Transistor;IEEE Transactions on Electron Devices;2023-02

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