Improvement in Switching Characteristics and Bias Stability of Solution-Processed Zinc–Tin Oxide Thin Film Transistors via Simple Low-Pressure Thermal Annealing Treatment

Author:

Feng Junhao1,Jeon Sang-Hwa1,Park Jaehoon2,Lee Sin-Hyung1,Jang Jaewon1ORCID,Kang In Man1ORCID,Kim Do-Kyung1,Bae Jin-Hyuk1ORCID

Affiliation:

1. School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Republic of Korea

2. Department of Electronic Engineering, Hallym University, Chuncheon 24252, Republic of Korea

Abstract

In this study, we used a low-pressure thermal annealing (LPTA) treatment to improve the switching characteristics and bias stability of zinc–tin oxide (ZTO) thin film transistors (TFTs). For this, we first fabricated the TFT and then applied the LPTA treatment at temperatures of 80 °C and 140 °C. The LPTA treatment reduced the number of defects in the bulk and interface of the ZTO TFTs. In addition, the changes in the water contact angle on the ZTO TFT surface indicated that the LPTA treatment reduced the surface defects. Hydrophobicity suppressed the off-current and instability under negative bias stress because of the limited absorption of moisture on the oxide surface. Moreover, the ratio of metal–oxygen bonds increased, while the ratio of oxygen–hydrogen bonds decreased. The reduced action of hydrogen as a shallow donor induced improvements in the on/off ratio (from 5.5 × 103 to 1.1 × 107) and subthreshold swing (8.63 to V·dec−1 and 0.73 V·dec−1), producing ZTO TFTs with excellent switching characteristics. In addition, device-to-device uniformity was significantly improved because of the reduced defects in the LPTA-treated ZTO TFTs.

Funder

National Research Foundation of Korea

Innovative Human Resource Development for Local Intellectualization support program

Publisher

MDPI AG

Subject

General Materials Science,General Chemical Engineering

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