Improvement in Switching Characteristics and Bias Stability of Solution-Processed Zinc–Tin Oxide Thin Film Transistors via Simple Low-Pressure Thermal Annealing Treatment
Author:
Affiliation:
1. School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Republic of Korea
2. Department of Electronic Engineering, Hallym University, Chuncheon 24252, Republic of Korea
Abstract
Funder
National Research Foundation of Korea
Innovative Human Resource Development for Local Intellectualization support program
Publisher
MDPI AG
Subject
General Materials Science,General Chemical Engineering
Link
https://www.mdpi.com/2079-4991/13/11/1722/pdf
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3. Robertson, Amorphous oxide semiconductor TFTs for displays and imaging;Nathan;IEEE/OSA J. Disp. Technol.,2014
4. Present status of amorphous In-Ga-Zn-O thin-film transistors;Kamiya;Sci. Technol. Adv. Mater.,2010
5. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors;Nomura;Nature,2004
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