Recent Advances in Gate Dielectrics for Enhanced Leakage Current Management and Device Performance
Author:
Funder
National Research Foundation of Korea
Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s42341-024-00531-6.pdf
Reference34 articles.
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3. A. Veloso et al., Gate-all-around NWFETs versus triple-gate FinFETs: Junctionless vs. extensionless and conventional junction devices with controlled EWF modulation for multi-VT CMOS, in 2015 Symposium on VLSI Technology (VLSI Technology) (IEEE, 2015), pp. T138–T139
4. J.S. Jur, Lanthanide-based oxides and silicates for high-k gate dielectric applications (2007)
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