Midgap-state profiles in undoped amorphous-silicon-based alloys
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics
Link
http://www.tandfonline.com/doi/pdf/10.1080/09500838908214784
Reference10 articles.
1. Steady state and transient transport in a-Si, Ge : H, F alloys
2. The energy of the dangling-bond states in a-Si
3. Density-of-State Distribution for Undoped a-Si:H and a-Si1-xGex:H Determined by Transient Heterojunction-Monitored Capacitance Method
4. A novel method for determining the gap‐state profile and its application to amorphous Si1−xGex: H films
5. Density of Mid-Gap States for Undoped a-Si1-xGex:H and a-Si:H Determined by Steady-State Heterojunction-Monitored Capacitance Method
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1. Density of gap states in amorphous hydrogenated silicon carbide determined using high-frequency capacitance-voltage measurement technique;Diamond and Related Materials;2001-03
2. Midgap states ina‐Si:H anda‐SiGe:Hp‐i‐nsolar cells and Schottky junctions by capacitance techniques;Journal of Applied Physics;1992-06-15
3. Characterization of a-Si:H and a-SiGe:H p-i-n and Schottky junctions by admittance circuit modeling;IEEE Transactions on Electron Devices;1992
4. Simulation of high‐frequency capacitance‐voltage characteristics of amorphous/crystalline heterojunctions;Journal of Applied Physics;1990-08
5. Thermal equilibration of surface defects in hydrogenated amorphous silicon-germanium alloys;Physical Review Letters;1990-07-30
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