Density of Mid-Gap States for Undoped a-Si1-xGex:H and a-Si:H Determined by Steady-State Heterojunction-Monitored Capacitance Method-Reference-Cited by-同舟云学术

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Density of Mid-Gap States for Undoped a-Si1-xGex:H and a-Si:H Determined by Steady-State Heterojunction-Monitored Capacitance Method

Published:1988-04-20 Issue:Part 2, No. 4 Volume:27 Page:L513-L515
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Matsuura Hideharu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The mechanisms of current transport and properties of a-SiC:H/c-Si heterostructures;Semiconductors;2005-08

2. Studies on thermal property and atomic structure of the (Bi,Sb)/Si(111) surface;Applied Surface Science;2000-08

3. Defect Characterization of High-Rate Deposited Hydrogenated Amorphous Silicon Films;MRS Proceedings;1996

4. Simulation of high‐frequency capacitance‐voltage characteristics of amorphous/crystalline heterojunctions;Journal of Applied Physics;1990-08

5. Structure, defect and transport properties of highly photoconductive a-SiGe:H and a-SiC:H alloys;Journal of Non-Crystalline Solids;1989-12

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