Midgap states ina‐Si:H anda‐SiGe:Hp‐i‐nsolar cells and Schottky junctions by capacitance techniques
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350444
Reference44 articles.
1. Fundamental considerations of the efficiency of amorphous solar cells
2. Bulk and surface states analysis in a‐Si:H by Schottky and MIS tunnel diodes capacitance and conductance measurements
3. Admittance frequency dependence of Schottky barriers formed on dc triode sputtered amorphous silicon: Hydrogen influence on deep gap state characteristics
4. The interpretation of capacitance and conductance measurements on metal-amorphous silicon barriers
5. The capacitance of rf sputtered hydrogenated amorphous silicon, Schottky barrier diodes
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