The energy of the dangling-bond states in a-Si
Author:
Affiliation:
1. a Carnegie Laboratory of Physics , University of Dundee , Dundee , DD1 4HN , Scotland
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818608238960
Reference19 articles.
1. Identification of the Dangling-Bond State within the Mobility Gap ofa-Si: H by Depletion-Width-Modulated ESR Spectroscopy
2. Calculation of the dynamic response of Schottky barriers with a continuous distribution of gap states
3. Photo-induced changes in the bulk density of gap states in hydrogenated amorphous silicon associated with the Staebler-Wronski effect
4. Space charge spectroscopy of the gap states in hydrogenated amorphous silicon counterdoped with boron
5. Electron Spin Resonance of Doped Glow-Discharge Amorphous Silicon
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